Broadly speaking, our research group focuses mainly on the material and device challenges of the Artificial Intelligence research. Our research interests are on two related technologies: the future Electronic memory devices and Thin film transistors (TFT). In memory options, we are currently studying Resistive Random Access Memory (ReRAM or RRAM) devices and several physical phenomena in this upcoming technology.  As the next level, research is ongoing in Neuromorphic memory technology.
 

In our labs, we study and try to understand the properties of electronic materials apt for these technologies by studying their electronic and opto-electronic properties. For instance, semiconductors with controllable defect levels are useful for the Resistive random access memory (ReRAM) technology.  Ultra-thin high-k dielectrics are important for Thin Film Transistor technology. High-mobility semiconductors for TFT's are of great interest to us. We attempt to understand the materials from its molecular electronic structures and to know their charge transport properties in various device configurations. Device performance will shed light on the materials properties as well. The set of materials in our current focus includes 2-dimensional materials including transition metal chalcogenides and graphene derivatives. We employ custom-built Pulsed Laser Deposition (PLD), custom-built Atomic Layer Deposition (ALD), Physical Vapor Deposition techniques and chemical techniques to fabricate thin films of interest. Other important semiconducting materials such as doped ZnO, organic materials and perovskite materials also are of great interest to us. We mostly follow thin film deposition methods that are technology compatible, as per International Technology Roadmaps.